View HGT1S20N60C3S_295506.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Data Sheet January 2000 File Number 4492.2
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49178.
Features
* 45A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Packaging
JEDEC STYLE TO-247
E C
Ordering Information
PART NUMBER HGTG20N60C3 HGTP20N60C3 HGT1S20N60C3S PACKAGE TO-247 TO-220AB TO-263AB BRAND G20N60C3 G20N60C3 G20N60C3
G
COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
E C
G
G
COLLECTOR (FLANGE) E
JEDEC TO-263AB
COLLECTOR (FLANGE) G E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 45 20 300 20 30 20A at 600V 164 1.32 100 -55 to 150 300 260 4 10 UNITS V A A A V V W W/oC mJ oC
oC oC
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES IC = IC110 VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.4 VCE = 480V VCE = 600V 120 20 TYP 28 1.4 1.5 4.8 8.4 91 122 28 24 151 55 295 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 320 550 700 UNITS V V A mA V V V nA A A V nC nC ns ns ns ns J J J
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 10, VGE = 15V, L = 100H
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
ICE = IC110, VCE = 0.5 BVCES ICE = IC110 VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 17)
2
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3) Thermal Resistance Junction To Case NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 17) MIN TYP 28 24 280 108 380 1.0 1.2 MAX 32 28 450 210 410 1.1 1.7 0.76 UNITS ns ns ns ns J mJ mJ
oC/W
Typical Performance Curves
50 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE , COLLECTOR TO EMITTER CURRENT (A)
VGE = 15V 40
140 120 100 80 60 40 20 0 0
TJ = 150oC, RG = 10, VGE = 15V, L = 100H
30
20
10
0 25
50
75
100
125
150
100
200
300
400
500
600
700
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX , OPERATING FREQUENCY (kHz)
100 TC 75oC 75oC 110oC 110oC 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.76oC/W, SEE NOTES 2 5 10 VGE 15V 10V 15V 10V
TJ = 150oC, RG = 10, L = 1mH, V CE = 480V
VCE = 360V, RG = 10, TJ = 125oC 12 ISC 10 8 6 4 tSC 2 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) 150 350 300 250 200 400
1
20
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
ISC , PEAK SHORT CIRCUIT CURRENT (A)
14
450
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Typical Performance Curves
ICE , COLLECTOR TO EMITTER CURRENT (A) 100
Unless Otherwise Specified (Continued)
ICE , COLLECTOR TO EMITTER CURRENT (A)
300 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s 250 TC = 25oC 200 150 TC = -55oC 100 50 0 0 1 2 3 4 5 6 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TC = 150oC
80 TC = -55oC TC = 25oC TC = 150oC 40
60
20 DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
4.0 EON2 , TURN-ON ENERGY LOSS (mJ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 TJ = 25oC, TJ = 150oC, VGE = 15V 20 25 30 35 40 TJ = 25oC, TJ = 150oC, VGE = 10V EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 10, L = 1mH, VCE = 480V
3.0 RG = 10, L = 1mH, VCE = 480V 2.5 2.0 TJ = 150oC; VGE = 10V OR 15V 1.5 1.0 0.5 0 TJ = 25oC; VGE = 10V OR 15V
5
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
50 RG = 10, L = 1mH, VCE = 480V tdI , TURN-ON DELAY TIME (ns) 45 trI , RISE TIME (ns)
200 RG = 10, L = 1mH, VCE = 480V 175 150 125 100 75 50 25 TJ = 25oC, TJ = 150oC, VGE = 15V 0 5 10 15 20 25 30 35 40 5 10 15 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC AND TJ = 150oC, VGE = 15V 20 25 30 35 40 TJ = 25oC, TJ = 150oC, VGE = 10V
40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 25 20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
4
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Typical Performance Curves
300 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 10, L = 1mH, VCE = 480V 275 tfI , FALL TIME (ns) 250 225 200 175 150 125 100 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 10V, VGE = 15V TJ = 150oC, VGE = 10V, VGE = 15V 110 100 TJ = 150oC, VGE = 10V OR VGE = 15V 90 80 70 60 50 40 5 10 15 20 25 30 35 40 TJ = 25oC, VGE = 10V OR 15V
Unless Otherwise Specified (Continued)
120 RG = 10, L = 1mH, VCE = 480V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE , COLLECTOR TO EMITTER CURRENT (A)
300 VGE, GATE TO EMITTER VOLTAGE (V) 250 200 150 100 TC = 25oC 50 0 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s
16 14 12 10 8 6 4 2 0 0
IG (REF) = 1mA, RL = 15, TC = 25oC
TC = -55oC TC = 150oC
VCE = 600V
VCE = 200V VCE = 400V
5
6
7
8
9
10
11
12
13
14
15
10
20
30
40
50
60
70
80
90
100
VGE , GATE TO EMITTER VOLTAGE (V)
Qg, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5 FREQUENCY = 1MHz 4 C, CAPACITANCE (nF) CIES
3
2 COES 1 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
5
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100
0.5 0.2
10-1
0.1 0.05 0.02 0.01 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 PD t2 100 101 t1
10-2
10-3 -5 10
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP3060 90% VGE L = 1mH VCE RG = 10 + VDD = 480V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
6
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 7
ECCOSORBDTM is a trademark of Emerson and Cumming, Inc.

▲Up To Search▲

Price & Availability of HGT1S20N60C3S

	To Download HGT1S20N60C3S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .